Nitride semiconductor light-emittting device and  process for producing the same

ABSTRACT

Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a nitride semiconductor light-emittingdevice, and more particularly to a nitride semiconductor light-emittingdevice having an AlN polycrystalline or amorphous substrate and aprocess for producing the same.

2. Description of the Related Art

Generally, a great deal of attention has been directed to nitridesemiconductor crystals as a material for use in preparing visible andultraviolet light LEDs and blue-green color optical devices such aslight-emitting diodes or laser diodes, because they produce light with abroad spectrum including the entire visible light region and also theultraviolet light region.

In order to prepare a high efficiency optical device with such nitridesemiconductor crystals, there is essentially required a technique whichenables a nitride semiconductor to grow into a high quality singlecrystal thin film. However, the III-A group nitride semiconductors arenot suitable for general substrates due to their lattice constant andthermal expansion coefficient and thus have a difficulty in growing asingle crystal thin film.

To grow nitride semiconductor crystals, a sapphire (Al₂O₃) or SiCsubstrate is limitedly employed only. For example, nitride semiconductorcrystals may be grown on the sapphire substrate by heteroepitaxy methodsusing Metal Organic Chemical Vapor Deposition (MOCVD), Molecular BeamEpitaxy (MBE), and the like.

But, despite use of such a nitride semiconductor single crystalsubstrate, it is difficult to directly grow a high quality nitridesemiconductor single crystal on the substrate due to inconsistency of alattice constant and a thermal expansion coefficient therebetween, andthus a low temperature nucleus-growth layer and a buffer layer areadditionally used. FIG. 1 is a cross-sectional side view of aconventional nitride semiconductor light-emitting device.

As shown in FIG. 1, a conventional nitride semiconductor light-emittingdevice; which is designated by reference number 10, includes an n-typenitride semiconductor layer 15 formed on a sapphire substrate 11, anactive layer 16 having a multi-well structure 16 and a p-type nitridesemiconductor layer 17. An n-electrode 19 a was formed on a region ofthe exposed portion of the n-type nitride semiconductor layer 15 byremoving and exposing some portions of the p-type nitride semiconductorlayer 17 and the active layer 10. A transparent electrode 18 containingNi and Au, and a p-electrode 19 b were formed on the p-type GaNsemiconductor layer 17.

Further, a buffer layer was formed on the sapphire substrate in order togrow high quality nitride semiconductor crystals. As the buffer layer, alow temperature nucleus-growth layer such as Al_(x)Ga_(1-x)N wherein xis between 0 and 1, is usually used.

However, even when a nitride semiconductor single crystal was grown onthe sapphire substrate after forming the low temperature nucleus-growthlayer, the nitride semiconductor single crystal had crystal defects ofabout 10⁹ to about 10¹⁰ cm⁻². In particular, these crystal defectspropagate in the vertical direction and thus exhibit adverse effectsresponsible for leakage of electrical current.

On the other hand, the conventional sapphire or SiC substrate may havedisadvantages of high cost, lower thermal conductivity, and lowermechanical properties, resulting in increased production costs anddeterioration of device characteristics, as compared to an AlNpolycrystalline or amorphous substrate. But, the AlN polycrystalline oramorphous substrate is not suitable for growth of the nitride singlecrystal layer and thus is not usually used as a substrate for thenitride semiconductor light-emitting device.

SUMMARY OF THE INVENTION

Therefore, the present invention has been made in view of the aboveproblems, and it is an object of the present invention to provide anitride semiconductor light-emitting device comprising a high qualitynitride semiconductor layer grown on an AlN polycrystalline or amorphoussubstrate by Lateral Epitaxial Overgrowth (LEO).

It is another object of the present invention to provide a process forproducing a nitride semiconductor light-emitting device comprising thestep of forming a high quality nitride semiconductor layer on an AlNpolycrystalline or amorphous substrate by using LEO.

In accordance with the present invention, the above and other objectscan be accomplished by the provision of a nitride semiconductorlight-emitting device comprising:

a polycrystalline or amorphous substrate made of AlN;

a plurality of dielectric patterns formed on the AlN substrate andhaving a stripe or lattice structure;

a lateral epitaxially overgrown-nitride semiconductor layer formed onthe AlN substrate having the dielectric patterns by Lateral EpitaxialOvergrowth (LEO);

a first conductive nitride semiconductor layer formed on the nitridesemiconductor layer;

an active layer formed on the first conductive nitride semiconductorlayer; and

a second conductive nitride semiconductor layer formed on the activelayer.

Preferably, the AlN substrate has an upper surface having irregularitiesformed to face in a predetermined direction.

The nitride semiconductor light-emitting device may further include abuffer layer formed on the AlN substrate. Preferably, the buffer layermay be a low temperature nucleus-growth layer made of a material havingthe formula of Al_(x)Ga_(1-x)N wherein x is between 0 and 1.

Preferably, the buffer layer has an upper surface having irregularitiesformed in a predetermined face direction.

Dielectric patterns used in the present invention may be made of SiO₂ orSiN. The lateral epitaxially overgrown-nitride semiconductor layer maybe formed of the nitride semiconductor layer containing first conductiveimpurities and then may be provided as a clad layer having the sameconductivity-type as that of the first conductive nitride semiconductorlayer.

The first conductive nitride semiconductor layer may be a p-type nitridesemiconductor layer. The second conductive nitride semiconductor layermay be an n-type nitride semiconductor layer. In this case, an n-typenitride semiconductor layer with a relatively low electrical resistanceis used as a capping layer and thus a transparent electrode layer forohmic contact may be eliminated.

Further, the present invention provides a process for producing a novelnitride semiconductor light-emitting device.

The above-mentioned process comprises the steps of:

providing a polycrystalline or amorphous substrate made of AlN;

forming a plurality of dielectric patterns having a stripe or latticestructure on the AlN substrate;

forming a lateral epitaxially overgrown-nitride semiconductor layer onthe AlN substrate having the dielectric patterns by Lateral EpitaxialOvergrowth (LEO);

forming a first conductive nitride semiconductor layer on the nitridesemiconductor layer;

forming an active layer on the first conductive nitride semiconductorlayer; and

forming a second conductive nitride semiconductor layer on the activelayer.

Preferably, the process may further comprise the step of etching theupper surface of the AlN substrate such that irregularities are formedon the AlN substrate in a predetermined face direction. The etching stepmay include a step of applying wet etching to the AlN substrate using anetching solution containing NaOH.

The process may further comprise the step of forming a buffer layer onthe AlN substrate, prior to forming the dielectric patterns. Preferably,the buffer layer may be a low temperature nucleus-growth layer made of amaterial having the formula of Al_(x)Ga_(1-x)N wherein x is between 0and 1. In accordance with the present invention, the process may furthercomprise the step of etching the upper surface of the buffer layer suchthat irregularities are formed on the buffer layer in a predeterminedface direction.

Further, the dielectric patterns may be made of SiO₂ or SiN. The lateralepitaxially overgrown-nitride semiconductor layer may be a nitridesemiconductor layer containing first conductive impurities. The firstconductive nitride semiconductor layer may be a p-type nitridesemiconductor layer. The second conductive nitride semiconductor layermay be an n-type nitride semiconductor layer.

Where the lateral epitaxially overgrown-nitride semiconductor layer is anitride semiconductor layer containing Al, the step of forming thelateral epitaxially overgrown-nitride semiconductor layer may comprisethe step of forming the lateral epitaxially overgrown-nitridesemiconductor layer by LEO while injecting Cl- or Br-based gas. As theBr- or Cl-based gas, a gas containing at least one selected from thegroup consisting of Br₂, Cl₂, CBr₄, CCl₄, HBr and HCl may be used.

The present invention provides a new type of nitride semiconductordevice by forming a nitride semiconductor layer on AlN polycrystallineor amorphous substrate in place of a conventional sapphire or SiCsubstrate. That is, a high quality nitride semiconductor layer may begrown by Lateral Epitaxial Overgrowth using dielectric patterns having astripe or lattice structure. More preferably, a higher quality nitridesemiconductor layer may be grown by applying a given etching solutionsuch as NaOH to the AlN polycrystalline or amorphous substrate to formirregularities facing a desired direction.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and other advantages of thepresent invention will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings, in which:

FIG. 1 is a cross-sectional side view of a conventional nitridesemiconductor light-emitting device;

FIG. 2 is a cross-sectional side view of a nitride semiconductorlight-emitting device according to one embodiment of the presentinvention; and

FIGS. 3 a-3 f are a flow chart illustrating a process for producing anitride semiconductor light-emitting device according to anotherembodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Now, the present invention will be described in detail with reference tothe attached drawings. FIG. 2 is a cross-sectional side view of anitride semiconductor light-emitting device according to one embodimentof the present invention.

A nitride semiconductor light-emitting device 20 includes an AlNpolycrystalline substrate 21. The AlN substrate 21 may comprise Gaand/or In, resulting in (GaIn)AlN. The AlN polycrystalline substrate 21was provided with a plurality of dielectric patterns 23 having a stripeor lattice structure which were arranged side by side. The AlNpolycrystalline substrate 21 having the dielectric patterns formedthereon was provided with a lateral epitaxially overgrown-nitridesemiconductor layer 24 grown by Lateral Epitaxial Overgrowth (LEO). Onthe nitride semiconductor layer 24 were sequentially formed an n-typenitride semiconductor layer 25, an active layer 26 having amultiple-well structure and a p-type nitride semiconductor layer 27.

Further, a transparent electrode layer 28 such as Ni/Au was formed onthe p-type nitride semiconductor layer 27 in order to decrease contactresistance. Each of p- and n-electrodes 29 b and 29 a was provided onthe transparent electrode layer 28 and the n-type nitride semiconductorlayer 25.

The lateral epitaxially overgrown-nitride semiconductor layer 24 formedon the AlN polycrystalline substrate 21 was formed by LEO usingdielectric patterns 23 having a stripe or lattice structure. Therefore,since crystals grow onto the dielectric patterns 23 in the lateraldirection, defects progressing in the vertical direction, i.e. thepotentials occurring between the interface of heterologous materials maybe greatly reduced, unlike a conventional growth method. Therefore, bydecreasing potentials which propagate to an active layer, leakage ofelectric current due to the crystal defects may be significantlyreduced. These dielectric patterns may be made of SiO₂ or SiN.

The lateral epitaxially overgrown-nitride semiconductor layer 24 used inthe present invention may be formed of an undoped nitride semiconductorlayer. Alternatively, the layer 24 may also be formed of a nitridesemiconductor layer having the same conductivity-type as that of thenitride semiconductor layer 25 formed on the upper part thereof.

For example, in this embodiment, the n-type lateral epitaxiallyovergrown-nitride semiconductor layer 24 may be formed by injectingn-type impurities to cause lateral epitaxial overgrowth, and mayconstitute an n-clad layer in integrated form with the n-type nitridesemiconductor layer 25 formed on the upper part thereof.

Further, unlike this embodiment, a structure having a p-type nitridesemiconductor layer disposed between an AlN polycrystalline substrateand an active layer, and the n-type nitride semiconductor layer disposedon the upper part of the active layer may be also provided. In thiscase, the n-type nitride semiconductor layer has a relatively lowelectrical resistance compared to the p-type nitride semiconductorlayer.

Thus, a transparent electrode structure 28 formed on the upper part ofthe p-type nitride semiconductor layer 27 as shown in FIG. 2 may beeliminated.

FIGS. 3 a-3 f are a flow chart illustrating a process for producing anitride semiconductor light-emitting device according to anotherembodiment of the present invention.

First, as shown in FIG. 3 a, an AlN polycrystalline substrate 31 wasprepared. That is, the present invention does not use a sapphiresubstrate but instead uses an AlN polycrystalline substrate 31 having arelatively high thermal conductivity and excellent mechanicalproperties.

As can be seen from FIG. 3 a, it is preferable to additionally etch theupper surface of the AlN polycrystalline substrate 31 so as to formirregularities 31 a having a desired crystal face. Generally, etchingrate varies depending on a direction of the crystal face, and then eachirregularity 31 a may have a main face direction in a certain facedirection by applying wet etching using an etching solution such asNaOH, or the like. The main face direction of the irregularities 31 amay provide more advantageous growth face conditions for forming anitride single crystal layer in a subsequent process. For instance,suitably shaped irregularities may be obtained by applying a NaOHetching solution to the AlN polycrystalline substrate 31 at atemperature of about 60° C. for 10 minutes.

Then, as shown in FIG. 3 b, a buffer layer 32 may be provided on the AlNpolycrystalline substrate 31. In accordance with the present invention,the buffer layer 32 may be optionally provided to obtain superiornitride crystals. As the buffer layer 32, a material satisfying acomposition formula of Al_(x)Ga_(1-x)N wherein x is between 0 and 1, maybe provided. For instance, a low temperature nucleus-growth layer madeof AlN, GaN, AlGaN, or the like may be used. In this step, an etchingprocess may be additionally carried out so as to form irregularitieshaving a desired crystal face on the buffer layer 32. As described inthe etching process for the AlN polycrystalline substrate, this isdesigned to provide advantageous growth conditions for the nitridesingle crystal layer in a subsequent process by forming irregularitieshaving a certain crystal face direction in the main face direction. Theetching process for forming irregularities need not be carried out onthe AlN polycrystalline substrate 31, but may instead be carried outonly in this step or may be carried out in both of them.

Next, as shown in FIG. 3 c, a plurality of dielectric patterns 33 havinga stripe or lattice structure were formed on the buffer layer 32. Thedielectric patterns 33 may be obtained by vapor-depositing dielectricmaterials such as SiO₂ and Si₃N₄ on the entire upper surface of thebuffer layer 32, and then selectively removing the deposited portionthereof so as to form stripe patterns (or lattice patterns) by using aphotolithography process. Alternatively, where the buffer layer 32 isnot present, the dielectric patterns 33 may be provided directly on theupper surface of the AlN polycrystalline substrate 31.

Thereafter, as shown in FIG. 3 d, the nitride semiconductor crystals 34were grown by LEO using dielectric patterns 33 having a stripe orlattice structure. This growth process may use conventional processessuch as MOCVD, MBE, and the like. In the lateral epitaxial overgrowingprocess of this step, a lateral epitaxially overgrown-nitride layer 34may be obtained in which nitride single crystals firstly grow on aregion of the buffer layer 32 exposed between the dielectric patterns33, a growth thickness thereof reaches the height of the dielectricpatterns 33, lateral epitaxial overgrowth progresses over the dielectricpatterns 33, and finally covers the dielectric patterns 33. Where thelateral epitaxially grown-nitride semiconductor layer 34 is a nitridesingle crystal containing Al such as AlGaN, it is difficult to grow highquality nitride crystals because Al has high reactivity with thedielectric patterns 33 such as SiO₂ or Si₃N₄ and adatoms have lowsurface mobility, thereby growing even on dielectric materials. Thus, inthis case, it is preferable to form the lateral epitaxiallyovergrown-nitride semiconductor layer 34 while injecting Cl- or Br-basedgas. As the Br- or Cl-based gas, it is preferable to use gas containingat least one selected from the group consisting of Br₂, Cl₂, CBr₄, CCl₄,HBr and HCl.

Then, as shown in FIG. 3 e, a p-type nitride semiconductor layer 35, anactive layer 36 and an n-type nitride semiconductor layer 37 were grownon the lateral epitaxially overgrown-nitride semiconductor layer 34.This growth process may be continuously carried out together with thelateral epitaxially overgrown-nitride semiconductor layer 34. Forinstance, the nitride semiconductor layers 35, 36 and 37 may becontinuously grown in combination with the lateral epitaxiallyovergrown-nitride semiconductor layer 34 as described in FIG. 3 d, underthe condition in which they are placed in an MOCVD chamber. In thiscase, the lateral epitaxially overgrown-nitride semiconductor layer 34described in FIG. 3 d may be formed of an undoped region. Alternatively,it may be formed of a layer containing p-type impurities, as in the caseof the p-type nitride semiconductor layer 35 and may be provided as aclad layer integrated with the p-type nitride semiconductor layer 35 onone side.

Finally, the n-type nitride semiconductor layer 37 and the active layer36 were mesa etched to expose a portion thereof, a first electrode 39 awas formed on a region of the exposed p-type nitride semiconductor layer35, and then an n- type electrode 39 b such as Ni/Au was formed on theupper surface of the n-type nitride semiconductor layer 37.

Alternatively, still another embodiment may be implemented by firstforming a p-type nitride semiconductor layer on an AlN polycrystallinesubstrate, forming an active layer on the p-type nitride semiconductorlayer, and then forming an n-type nitride semiconductor layer on theactive layer.

As apparent from the above description, the present invention providesan inexpensive nitride semiconductor light-emitting device havingsuperior characteristics, by forming a high quality nitridesemiconductor layer on the substrate by LEO using an AlN polycrystallineor amorphous substrate having superior thermal conductivity andmechanical properties.

Although the preferred embodiments of the present invention have beendisclosed for illustrative purposes, those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and spirit of the inventionas disclosed in the accompanying claims.

1-9. (canceled)
 10. A process for producing a nitride semiconductorlight-emitting device, comprising the steps of: providing apolycrystalline or amorphous substrate made of AlN; forming a pluralityof dielectric patterns having a stripe or lattice structure on the AlNsubstrate; forming a lateral epitaxially overgrown-nitride semiconductorlayer on the AlN substrate having the dielectric patterns by LateralEpitaxial Overgrowth; forming a first conductive nitride semiconductorlayer on the nitride semiconductor layer; forming an active layer on thefirst conductive nitride semiconductor layer; and forming a secondconductive nitride semiconductor layer on the active layer.
 11. Theprocess as set forth in claim 10, wherein the substrate comprises(GaIn)AlN substrate.
 12. The process as set forth in claim 10, whereinthe AlN substrate is a polycrystalline substrate, and the processfurther comprises the step of etching the upper surface of the AlNsubstrate such that irregularities having a predetermined face directionare formed on the AlN polycrystalline substrate.
 13. The process as setforth in claim 10, wherein the etching step is a step of applying wetetching to the AlN substrate using an etching solution containing NaOH.14. The process as set forth in claim 10, further comprising: forming abuffer layer on the AlN substrate, prior to forming the dielectricpatterns.
 15. The process as set forth in claim 14, wherein the bufferlayer is a low temperature nucleus-growth layer made of a materialhaving a formula of Al_(x)Ga_(1-x)N wherein x is between 0 and
 1. 16.The process as set forth in claim 12, wherein the process furthercomprises the step of etching the upper surface of the buffer layer suchthat irregularities having a predetermined face direction are formedthereon.
 17. The process as set forth in claim 16, wherein the etchingstep is a step of applying wet etching to the buffer layer using anetching solution containing NaOH.
 18. The process as set forth in claim10, wherein the dielectric patterns are made of SiO₂ or SiN.
 19. Theprocess as set forth in claim 10, wherein the lateral epitaxiallyovergrown-nitride semiconductor layer is a nitride semiconductor layercontaining first conductive impurities.
 20. The process as set forth inclaim 10, wherein the first conductive nitride semiconductor layer is ann-type nitride semiconductor layer, and the second conductive nitridesemiconductor layer is a p-type nitride semiconductor layer.
 21. Theprocess as set forth in claim 10, wherein the lateral epitaxiallyovergrown-nitride semiconductor layer is a nitride semiconductor layercontaining Al, and the step of forming the lateral epitaxiallyovergrown-nitride semiconductor layer is a step of forming the lateralepitaxially overgrown-nitride semiconductor layer using LateralEpitaxial Overgrowth while injecting Cl- or Br-based gas.
 22. Theprocess as set forth in claim 20, wherein the Br- or Cl-based gas is gascontaining at least one selected from the group consisting of Br₂, Cl₂,CBr₄, CCl₄, HBr and HCl.